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RECTRO N SEM ICO NDU CTO R TECHN ICAL SPECIFICATIO N 1N4150 1N4150 SIGNAL DIODE Absolute Maximum Ratings (Ta=25C) Items Symbol Ratings Unit Reverse Voltage VR 50 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW /C (25C) Forward Current IF 200 mA Junction Temp. Tj -65 to 200 C Storage Temp. Tstg -65 to 200 C Mechanical Data Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated 26 MIN Dim ensions in millim eters Dimensions (DO-35) DO-35 26 MIN 0.457 DIA. 0.559 4.2 m ax. 2.0 DIA. m ax. Electrical Characteristics (Ta=25C) Ratings Breakdown Voltage IR= 5.0uA Peak Forward Surge Current PW = 1sec. Maximum Forward Voltage IF= 200mA Maximum Reverse Current VR= 50V VR= 20V, Tj= 150C Maximum Junction Capacitance VR= 0, f= 1 MHz Max Reverse Recovery Time IF= -IR= 10-200mA, to 0.1 IF Symbol BV IFsurge VF IR Ratings 50 1.0 1.0 Unit V A V uA 0.10 100 Cj 2.5 trr 4 ns pF RECTRON USA 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com |
Price & Availability of 1N4150 |
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